標題: Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
作者: Huang, Huei-Min
Lu, Tien-Chang
Chang, Chiao-Yun
Lan, Yu-Pin
Ling, Shih-Chun
Chan, Wei-Wen
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: Non-polar;InGaN/GaN MQWs;optical polarization;strain
公開日期: 2012
摘要: Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73x10(-2) to 2.58x10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
URI: http://hdl.handle.net/11536/15892
http://dx.doi.org/82621Y
ISBN: 978-0-8194-8905-0
ISSN: 0277-786X
DOI: 82621Y
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES VII
Volume: 8262
顯示於類別:會議論文


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  1. 000302556100039.pdf