標題: Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growth
作者: Chin, A
Lin, BC
Gu, GL
Hsieh, KY
Jou, MJ
Lee, BJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1996
摘要: Long range alloy ordering is observed by cross-sectional TEM in both (111)A and (111)B AlGaAs. We have measured a 31 meV photoluminescence (PL) peak energy red shift of (111)A and (111)B Al0.30Ga0.70As to that of (100), while the PL integrated intensity in (111)A and (111)B is near an order of magnitude larger than that of (100). The ordering effect is reduced at a high growth temperature of 700 degrees C and the best PL linewidth of 17 and 3 meV are obtained in (111)A Al0.40Ga0.60As and (111)B Al0.30Ga0.70As, respectively. In the In0.6Ga0.4P/InGaAlP MQW, similar ordering related PL peak energy red shift of 37 meV and similar to 2 times enhanced PL integrated intensity are observed for 0 degrees sample to that of 15 degrees.
URI: http://hdl.handle.net/11536/1588
ISBN: 0-7503-0342-5
ISSN: 0951-3248
期刊: COMPOUND SEMICONDUCTORS 1995
Volume: 145
起始頁: 587
結束頁: 592
Appears in Collections:Conferences Paper