Title: Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
Authors: Tzeng, Wen-Hsien
Zhong, Chia-Wen
Liu, Kou-Chen
Chang, Kow-Ming
Lin, Horng-Chih
Chan, Yi-Chun
Kuo, Chun-Chih
Tsai, Feng-Yu
Tseng, Ming Hong
Chen, Pang-Shiu
Lee, Heng-Yuan
Chen, Frederick
Tsai, Ming-Jinn
Department of Electronics Engineering and Institute of Electronics
Keywords: Multilayer;Stacked oxide;Resistive memory;RRAM
Issue Date: 1-Feb-2012
Abstract: A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/center dot center dot center dot/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. Crown Copyright (c) 2011 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.10.118
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.118
Volume: 520
Issue: 8
Begin Page: 3415
End Page: 3418
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