標題: Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure
作者: Lin, Gray
Su, Pei-Yin
Cheng, Hsu-Chieh
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 13-二月-2012
摘要: Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm(2) and no noticeable threshold jump is observed. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended to 150 nm, from 1143 to 1293 nm. The effect of cavity length on the tuning characteristics is discussed and the strategy for design and optimization of multilayer quantum-dot structure is also proposed. (C) 2012 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.20.003941
http://hdl.handle.net/11536/15841
ISSN: 1094-4087
DOI: 10.1364/OE.20.003941
期刊: OPTICS EXPRESS
Volume: 20
Issue: 4
起始頁: 3941
結束頁: 3947
顯示於類別:期刊論文


文件中的檔案:

  1. 000301041900056.pdf