標題: Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
作者: Liao, Ta-Chuan
Kang, Tsung-Kuei
Lin, Chia-Min
Wu, Chun-Yu
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: elemental semiconductors;excimer lasers;grain boundaries;grain growth;nanowires;silicon;thin film transistors
公開日期: 27-二月-2012
摘要: In this letter, gate-all-around (GAA) polycrystalline silicon thin-film transistors (TFTs) with self-aligned grain-growth channels were fabricated using excimer laser crystallization (ELC) on a recessed-nanowire (RN) structure. Via the RN structure constructed by a simple sidewall-spacer formation, location-controlled nucleation and volume-confined lateral grain growth within the RN body during ELC process have been demonstrated with only one perpendicular grain boundary in each nanowire channel. Because of the high-crystallinity channel together with GAA operation mode, the proposed GAA-RN TFTs show good device integrity of lower threshold voltage, steeper subthreshold slope, and higher field-effect mobility as compared with the conventional planar counterparts. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691184]
URI: http://dx.doi.org/10.1063/1.3691184
http://hdl.handle.net/11536/15838
ISSN: 0003-6951
DOI: 10.1063/1.3691184
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 9
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000301504800069.pdf