標題: Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films
作者: Huang, Yu-Jen
Tsai, Min-Chuan
Wang, Chiung-Hsin
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Phase-change memory;Germanium antimony telluride;Cerium;Doping;Electrical properties
公開日期: 29-二月-2012
摘要: Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 degrees C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. (c) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.12.014
http://hdl.handle.net/11536/15837
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.12.014
期刊: THIN SOLID FILMS
Volume: 520
Issue: 9
起始頁: 3692
結束頁: 3696
顯示於類別:期刊論文


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  1. 000301627100048.pdf