標題: Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory
作者: Lin, Yu-Hsien
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Flash memory;hafnium oxide;nanocrystals;nonvolatile memories
公開日期: 1-三月-2012
摘要: In this paper, we demonstrate 50-nm trigate nonvolatile HfO2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.
URI: http://dx.doi.org/10.1109/TNANO.2011.2179062
http://hdl.handle.net/11536/15835
ISSN: 1536-125X
DOI: 10.1109/TNANO.2011.2179062
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 11
Issue: 2
起始頁: 412
結束頁: 417
顯示於類別:期刊論文


文件中的檔案:

  1. 000301420900028.pdf