標題: Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
作者: Yu, Chang-Hung
Wu, Yu-Sheng
Hu, Vita Pi-Ho
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic integrity (EI);germanium-on-insulator (GeOI);InGaAs-OI;quantum confinement (QC);subthreshold swing (SS);ultra-thin-body (UTB)
公開日期: 1-三月-2012
摘要: This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrodinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made.
URI: http://dx.doi.org/10.1109/TNANO.2011.2169084
http://hdl.handle.net/11536/15834
ISSN: 1536-125X
DOI: 10.1109/TNANO.2011.2169084
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 11
Issue: 2
起始頁: 287
結束頁: 291
顯示於類別:期刊論文


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  1. 000301420900010.pdf