標題: The characteristics of the high-K Er2O3 (erbium oxide) dielectrics deposited on polycrystalline silicon
作者: Kao, Chyuan-Haur
Chen, Hsiang
Pan, Yu Tsung
Chiu, Jing Sing
Lu, Tien-Chang
光電工程學系
Department of Photonics
關鍵字: Er2O3 film;Polycrystalline;RTA annealing
公開日期: 1-三月-2012
摘要: The high-k Er2O3 films deposited on polycrystalline silicon treated with various post-rapid thermal annealing (RTA) temperatures were formed as high k dielectrics. In order to study the annealing effects, electrical measurements, optical characterizations, and multiple material analyses techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) were performed to examine the differences between the samples in various annealing conditions. The annealing temperature at 800 degrees C was the optimal condition to form a well-crystallized Er2O3 film with excellent material quality and electrical properties. RTA annealing at an appropriate annealing temperature of 800 degrees C might effectively mitigate the dangling bonds and traps and improve electrical and material properties of the dielectric. (C) 2012 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.ssc.2011.12.042
http://hdl.handle.net/11536/15827
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2011.12.042
期刊: SOLID STATE COMMUNICATIONS
Volume: 152
Issue: 6
起始頁: 504
結束頁: 508
顯示於類別:期刊論文


文件中的檔案:

  1. 000301400000016.pdf