標題: Field Emission in Vertically Aligned ZnO/Si-Nanopillars with Ultra Low Turn-On Field
作者: Chang, Yuan-Ming
Liu, Mao-Chen
Kao, Pin-Hsu
Lin, Chih-Ming
Lee, Hsin-Yi
Juang, Jenh-Yih
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: filed emission;ZnO;silicon nanopillars;atomic layer deposition
公開日期: 1-三月-2012
摘要: An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver (Ag) nanodots as natural metal-nanomask during dry etching process. The obtained Si-NPs were preferentially aligned along the c-axis direction. Ultrathin ZnO films (similar to 9 nm) were subsequently deposited on the Si-NPs by atomic layer deposition (ALD) to enhance the field emission property. The average diameter of the ZnO/Si-NPs is in the order of tens of nanometers, which enables efficient field emission and gives rise to marked improvement in the field enhancement factor, beta. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta approximate to 1.33x10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs.
URI: http://dx.doi.org/10.1021/am201667m
http://hdl.handle.net/11536/15814
ISSN: 1944-8244
DOI: 10.1021/am201667m
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 4
Issue: 3
起始頁: 1411
結束頁: 1416
顯示於類別:期刊論文


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