標題: Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition
作者: Yang, S.
Kuo, C. C.
Liu, W. -R.
Lin, B. H.
Hsu, H. -C.
Hsu, C. -H.
Hsieh, W. F.
光電工程學系
Department of Photonics
公開日期: 5-三月-2012
摘要: Basal plane stacking faults (BSFs) with density of similar to 1 x 10(6) cm(-1) are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi. org/10.1063/1.3692730]
URI: http://dx.doi.org/10.1063/1.3692730
http://hdl.handle.net/11536/15806
ISSN: 0003-6951
DOI: 10.1063/1.3692730
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 10
結束頁: 
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  1. 000301655500023.pdf