Title: n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection
Authors: Tasi, D. S.
Kang, C. F.
Wang, H. H.
Lin, C. A.
Ke, J. J.
Chu, Y. H.
He, J. H.
Department of Materials Science and Engineering
Issue Date: 15-Mar-2012
Abstract: A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (similar to 2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment. (C) 2012 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.37.001112
ISSN: 0146-9592
DOI: 10.1364/OL.37.001112
Volume: 37
Issue: 6
Begin Page: 1112
End Page: 1114
Appears in Collections:Articles