標題: Embedded I/O PAD Circuit Design for OTP Memory Power-Switch Functionality
作者: Huang, Shao-Chang
Chen, Ke-Horng
Lin, Wei-Yao
Lee, Zon-Lon
Chang, Kun-Wei
Hsu, Erica
Lee, Wenson
Chen, Lin-Fwu
Lu, Chris
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: Electrostatic discharge (ESD);Neobit;one-time programming (OTP)
公開日期: 1-Apr-2012
摘要: An additional high-voltage pad is generally applied for one-time-programming (OTP) memory product applications. This may increase the complexity of input/output (I/O) pad arrangement and the area penalty. In this paper, a novel approach of I/O circuit embedded with the power-switch function is proposed for multifunction integrations in one I/O pad. The capabilities of high-voltage programming, I/O signal handling, electrostatic discharge protection and latch-up prevention for this novel circuit are well examined from silicon verifications.
URI: http://dx.doi.org/10.1109/TVLSI.2011.2106808
http://hdl.handle.net/11536/15776
ISSN: 1063-8210
DOI: 10.1109/TVLSI.2011.2106808
期刊: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume: 20
Issue: 4
起始頁: 746
結束頁: 750
Appears in Collections:Articles


Files in This Item:

  1. 000302085300016.pdf