標題: Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template
作者: Kuo, Cheng-Huang
Chang, Li-Chuan
Chou, Hsiu-Mei
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Current spreading;InGaN/GaN;light-emitting diode (LED);nano
公開日期: 1-四月-2012
摘要: In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
URI: http://dx.doi.org/10.1109/LPT.2012.2185043
http://hdl.handle.net/11536/15770
ISSN: 1041-1135
DOI: 10.1109/LPT.2012.2185043
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 24
Issue: 7
起始頁: 608
結束頁: 610
顯示於類別:期刊論文


文件中的檔案:

  1. 000302085900007.pdf