標題: Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells
作者: Tsai, C. C.
Hsu, C. H.
Hsu, H. J.
Cheng, P. H.
Wang, C. M.
Huang, Y. T.
光電工程學系
Department of Photonics
關鍵字: photovoltaics;thin film solar cells;a-Si:H;amorphous Si-Ge alloy
公開日期: 2011
摘要: This paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI: http://hdl.handle.net/11536/15748
http://dx.doi.org/10.1002/pssc.201001229
ISSN: 1862-6351
DOI: 10.1002/pssc.201001229
期刊: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10
Volume: 8
Issue: 10
顯示於類別:會議論文


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  1. 000301591500005.pdf