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dc.contributor.authorTsai, Cheng-Yuen_US
dc.contributor.authorYu, Shih-Yingen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorWang, Chun-Wenen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2014-12-08T15:22:12Z-
dc.date.available2014-12-08T15:22:12Z-
dc.date.issued2012en_US
dc.identifier.issn1466-8033en_US
dc.identifier.urihttp://hdl.handle.net/11536/15714-
dc.identifier.urihttp://dx.doi.org/10.1039/c1ce06107ken_US
dc.description.abstractSingle-crystalline Ge nanowires have been synthesized on Au-coated Si substrates through a thermal evaporation, condensation method and vapor-liquid-solidmechanism. The [111] growth direction of the Ge nanowires was analyzed using HRTEM and fast Fourier transform diffraction patterns. Global back-gated Ge nanowire field-effect transistors (FETs) on the Si3N4 dielectrics were fabricated and studied, showing p-type behavior and a field effect hole mobility of 44.3 cm(2) V-1 s(-1). The Ge channel length could be well controlled through the annealing process. After a rapid thermal annealing (RTA) process, Ni2Ge/Ge/Ni2Ge nano-heterostructures were formed. The electrical transport properties were effectively improved by the heterojunction rather than the metal contact. The epitaxial relationship between Ge and orthorhombic Ni2Ge was Ge [110]//Ni2Ge[110] and Ge(-11-1)//Ni2Ge(1-1-2). From electrical transport properties, the measured resistivity of the Ge nanowires was much lower than intrinsic bulk Ge material. A room temperature photoluminescence spectrum of the Ge nanowires possessed a broad blue emission with a peak at 462 nm in wavelength, which was attributed to the oxide-related defect states. Due to the existence of the defects, a Ge nanowire FET was able to detect visible light and serve as a nanowire photodetector.en_US
dc.language.isoen_USen_US
dc.titleGrowth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c1ce06107ken_US
dc.identifier.journalCRYSTENGCOMMen_US
dc.citation.volume14en_US
dc.citation.issue1en_US
dc.citation.spage53en_US
dc.citation.epage58en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000300617000006-
dc.citation.woscount3-
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