標題: Characterization and fabrication of chimney-shaped metal field emitters
作者: Cheng, HC
Wang, CC
Ku, TK
Hsieh, IJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chimney;cone;field emission;metal field emitter;sputtering;FEA
公開日期: 1-一月-1996
摘要: A novel fabrication technology has been successully developed for chimney-shaped metal field emitters in order to improve the electrical characterisitcs of field-emission devices. This technology is based on anisotropic dry etching and sputtering deposition of metal film as well as wet etching of the attached silicon. It enables easy fabrication of chimney-shaped field emitters with excellent uniformity and high reproducibility. The anode current of the chimney-shaped Cr field emitter array (FEA) is 36.3 mu-A at the applied voltage of 1100 V and the threshold voltage V-T, defined as that for which the anode current I-n reaches 1 mu-A is 787 V. The chimney-shaped Cr FEA emits a current thirty times higher than that from the cone-shaped Cr-clad FEA at the applied voltage of 1100 V. This can be attributed to the presence of many sharp tips along the edge of the chimney-shaped emitter. The degradation phenomenon is not observed because compensation occurs between these many sharp tips. Another merit of this technique is that only one photolithography mask is needed during processing.
URI: http://dx.doi.org/10.1143/JJAP.35.308
http://hdl.handle.net/11536/1571
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.308
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 1A
起始頁: 308
結束頁: 312
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TU37000055.pdf