標題: Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
作者: Lai, Ming-Hui
Wu, YewChung Sermon
Huang, Jung-Jie
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2012
摘要: Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for active-matrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability. (C) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.51.011301
http://hdl.handle.net/11536/15702
ISSN: 0021-4922
DOI: 10.1143/JJAP.51.011301
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 1
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