標題: Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
作者: Hsiao, Yu-Lin
Lu, Lung-Chi
Wu, Chia-Hsun
Chang, Edward Yi
Kuo, Chien-I
Maa, Jer-Shen
Lin, Kung-Liang
Luong, Tien-Tung
Huang, Wei-Ching
Chang, Chia-Hua
Dee, Chang Fu
Majlis, Burhanuddin Yeop
材料科學與工程學系
半導體材料與製程設備組
照明與能源光電研究所
Department of Materials Science and Engineering
Degree Program of Semiconductor Material and Process Equipment
Institute of Lighting and Energy Photonics
公開日期: 1-Feb-2012
摘要: 2.2-mu m-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers. With the increase of the graded AlxGa1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-AlxGa1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 x 1 cm(2) larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm. (c) 2012 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.51.025505
http://hdl.handle.net/11536/15652
ISSN: 0021-4922
DOI: 10.1143/JJAP.51.025505
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 51
Issue: 2
結束頁: 
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