Title: Enhanced performance and reliability of NILC-TFTs using FSG buffer layer
Authors: Chen, Chien-Chih
Wu, YewChung Sermon
Chang, Chih-Pang
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: Fluorinated-silicate-glass (FSG);Polycrystalline silicon thin-film transistors;(poly-Si TFTs);Ni-metal-induced lateral crystallization;(NILC)
Issue Date: 15-Feb-2012
Abstract: A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2011.11.080
http://hdl.handle.net/11536/15629
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2011.11.080
Journal: MATERIALS CHEMISTRY AND PHYSICS
Volume: 132
Issue: 2-3
Begin Page: 637
End Page: 640
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