Title: Optimal Te-doping in GaSe for non-linear applications
Authors: Ku, Shin An
Chu, Wei-Chen
Luo, Chih Wei
Andreev, Yu. M.
Lanskii, Grigory
Shaidukoi, Anna
Izaak, Tatyana
Svetlichnyi, Valery
Wu, Kaung Hsiung
Kobayashi, T.
Department of Electrophysics
Issue Date: 27-Feb-2012
Abstract: Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as e -GaSe: Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E'((2)) (similar to 0.584 THz) and E"((2)) (1.77 THz) on Te-doping in GaSe: Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E'((2)) and E"((2)) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E'((2)) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals. (C) 2012 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.20.005029
ISSN: 1094-4087
DOI: 10.1364/OE.20.005029
Volume: 20
Issue: 5
Begin Page: 5029
End Page: 5037
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