標題: A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric
作者: Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Closed-form model;dark space (DS);eigenenergy;germanium;wavefunction penetration (WP)
公開日期: 1-Mar-2012
摘要: This paper provides a closed-form model of the "dark space (DS)" for Ge MOSFETs with high-k gate dielectrics. This model shows accurate dependences on barrier height, surface electric field, and quantization effective mass of the channel and gate dielectric. Our model predicts that the surface DS due to quantum confinement decreases with reverse substrate bias and increasing channel doping. Our model can be also used for devices with a steep retrograde doping profile. This physically accurate model will be crucial to the prediction of the subthreshold swing and electrostatic integrity of advanced Ge devices.
URI: http://dx.doi.org/10.1109/TED.2011.2177091
http://hdl.handle.net/11536/15604
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2177091
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Issue: 3
起始頁: 530
結束頁: 535
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