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dc.contributor.authorKuo, Chia-Haoen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:21:54Z-
dc.date.available2014-12-08T15:21:54Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2179515en_US
dc.identifier.urihttp://hdl.handle.net/11536/15594-
dc.description.abstractIn this letter, we fabricated and characterized thin-film transistors with a suspended poly-Si nanowire (NW) channel and gate nitride with embedded silicon nanocrystals (Si NCs). The embedded Si NCs increase the surface roughness, thus reducing the adhesive force as the nitride is in contact with the poly-Si NW channel during the operation. Such a feature results in a reduction in pull-in voltage and sharper pull-out behavior. Moreover, this approach also greatly improves the endurance characteristics of the devices.en_US
dc.language.isoen_USen_US
dc.subjectAdhesive forceen_US
dc.subjectnanocrystal (NC)en_US
dc.subjectnanowire (NW)en_US
dc.subjectpoly-Sien_US
dc.titlePerformance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitrideen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2179515en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue3en_US
dc.citation.spage390en_US
dc.citation.epage392en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000300580000030-
dc.citation.woscount0-
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