標題: Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
作者: Kuo, Chia-Hao
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Adhesive force;nanocrystal (NC);nanowire (NW);poly-Si
公開日期: 1-三月-2012
摘要: In this letter, we fabricated and characterized thin-film transistors with a suspended poly-Si nanowire (NW) channel and gate nitride with embedded silicon nanocrystals (Si NCs). The embedded Si NCs increase the surface roughness, thus reducing the adhesive force as the nitride is in contact with the poly-Si NW channel during the operation. Such a feature results in a reduction in pull-in voltage and sharper pull-out behavior. Moreover, this approach also greatly improves the endurance characteristics of the devices.
URI: http://dx.doi.org/10.1109/LED.2011.2179515
http://hdl.handle.net/11536/15594
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2179515
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 3
起始頁: 390
結束頁: 392
顯示於類別:期刊論文


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  1. 000300580000030.pdf