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dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorLou, Jyun-Haoen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:21:54Z-
dc.date.available2014-12-08T15:21:54Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2182600en_US
dc.identifier.urihttp://hdl.handle.net/11536/15593-
dc.description.abstractResistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.en_US
dc.language.isoen_USen_US
dc.subjectNonvolatile memoryen_US
dc.subjectresistance switchingen_US
dc.subjecttip electric fielden_US
dc.subjecttungsten silicide (WSi)en_US
dc.titleAsymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2182600en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue3en_US
dc.citation.spage342en_US
dc.citation.epage344en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000300580000014-
dc.citation.woscount16-
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