|標題:||Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
|關鍵字:||Nonvolatile memory;resistance switching;tip electric field;tungsten silicide (WSi)|
|摘要:||Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|