標題: Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
作者: Syu, Yong-En
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Geng-Wei
Chang, Kuan-Chang
Lou, Jyun-Hao
Tai, Ya-Hsiang
Tsai, Ming-Jinn
Wang, Ying-Lang
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Nonvolatile memory;resistance switching;tip electric field;tungsten silicide (WSi)
公開日期: 1-三月-2012
摘要: Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
URI: http://dx.doi.org/10.1109/LED.2011.2182600
http://hdl.handle.net/11536/15593
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2182600
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 3
起始頁: 342
結束頁: 344
顯示於類別:期刊論文


文件中的檔案:

  1. 000300580000014.pdf