標題: Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
作者: Lo, Wen-hung
Chang, Ting-Chang
Dai, Chih-Hao
Chung, Wan-Lin
Chen, Ching-En
Ho, Szu-Han
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gate-induced floating-body effect (GIFBE);negative bias temperature instability (NBTI);silicon-on-insulator (SOI) MOSFETs;strained silicon
公開日期: 1-三月-2012
摘要: This letter investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal-oxide-semiconductor field-effect transistors. The strained FB device has less NBTI degradation than unstrained devices. This behavior can be attributed to the fact that more electron accumulation induced by strain effect reduces the electric oxide field significantly during NBTI stress. Analysis of the body current (I-B) under source/drain grounded and floating operation indicates an increase in the anode electron injection and electron tunneling from conduction band which occur at the partial n(+) poly-Si gate and Si substrate, respectively. This phenomenon can be attributed to the bandgap narrowing which has been induced by the strain effect.
URI: http://dx.doi.org/10.1109/LED.2011.2177956
http://hdl.handle.net/11536/15592
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2177956
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 3
起始頁: 303
結束頁: 305
顯示於類別:期刊論文


文件中的檔案:

  1. 000300580000001.pdf