標題: Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment
作者: Huang, Po-Chun
Chen, Lu-An
Chen, Chen-Chia
Sheu, Jeng-Tzong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Multiple-gate;Multiple-channel;Gate-all-around (GAA);Plasma treatment;Thin-film transistors (TFTs);Variation
公開日期: 1-三月-2012
摘要: In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2011.10.009
http://hdl.handle.net/11536/15586
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.10.009
期刊: MICROELECTRONIC ENGINEERING
Volume: 91
Issue: 
起始頁: 54
結束頁: 58
顯示於類別:期刊論文


文件中的檔案:

  1. 000300919000010.pdf