標題: Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection
作者: Chen, Wen-Yi
Rosenbaum, Elyse
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Charge device model (CDM);electrostatic discharge (ESD);silicon-controlled rectifier (SCR)
公開日期: 1-三月-2012
摘要: Diode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power.
URI: http://dx.doi.org/10.1109/TDMR.2011.2171487
http://hdl.handle.net/11536/15573
ISSN: 1530-4388
DOI: 10.1109/TDMR.2011.2171487
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 12
Issue: 1
起始頁: 10
結束頁: 14
顯示於類別:期刊論文


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  1. 000301236700002.pdf