標題: Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films
作者: Wu, Chih-Yuan
Lin, Bo-Tsung
Zhang, Yu-Jie
Li, Zhi-Qing
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 5-Mar-2012
摘要: The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3-90 K. We found that the small-energy-transfer electron-electron (e-e) scattering process dominated the dephasing from a few kelvins to several tens of kelvins. At higher temperatures, a crossover to the large-energy-transfer e-e scattering process was observed. Below about 1 to 2 K, the dephasing time tau(phi) revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant D, i.e., tau(phi)(T approximate to 0.3 K) proportional to 1/D. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.
URI: http://dx.doi.org/10.1103/PhysRevB.85.104204
http://hdl.handle.net/11536/15557
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.85.104204
期刊: PHYSICAL REVIEW B
Volume: 85
Issue: 10
起始頁: 0
結束頁: 0
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