標題: Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate
作者: Fu, Yi-Keng
Lu, Yu-Hsuan
Xuan, Rong
Chao, Chia-Hsin
Su, Yan-Kuin
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
關鍵字: Chemical wet-etching;GaN;light extraction;near-ultraviolet light-emitting diode (NUV LED);simulation
公開日期: 15-三月-2012
摘要: In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.
URI: http://dx.doi.org/10.1109/LPT.2011.2182606
http://hdl.handle.net/11536/15550
ISSN: 1041-1135
DOI: 10.1109/LPT.2011.2182606
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 24
Issue: 6
起始頁: 488
結束頁: 490
顯示於類別:期刊論文


文件中的檔案:

  1. 000300847400009.pdf