標題: Simple source/drain contact structure for solution-processed n-channel fullerene thin-film transistors
作者: Chen, Fang-Chung
Tsai, Tzung-Han
Chien, Shang-Chieh
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Polymer;Field effect;Transistor;Interface
公開日期: 1-四月-2012
摘要: This paper describes a simple approach for reducing the contact resistances at the source/drain (S/D) contacts in solution-processed n-channel organic thin-film transistors (OTFTs). Blending poly(ethylene glycol) (PEG) into the fullerene semiconducting layer significantly improved the device performance. The PEG molecules in the blends underwent chemical reactions with the Al atoms of the electrodes, thereby forming a better organic-metal interface. Further, the rougher surface obtained after the addition of PEG could also increase the effective contact area, thereby reducing the resistance. As a result, the electrical properties of the devices were significantly improved. Unlike conventional bilayer structures, this approach allows the ready preparation of OTFTs with a low electron injection barrier at the S/D contacts. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2011.12.026
http://hdl.handle.net/11536/15545
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2011.12.026
期刊: ORGANIC ELECTRONICS
Volume: 13
Issue: 4
起始頁: 599
結束頁: 603
顯示於類別:期刊論文


文件中的檔案:

  1. 000300846200010.pdf