標題: Structural and nanomechanical properties of a-plane ZnO thin films deposited under different oxygen partial pressures
作者: Jian, Sheng-Rui
Chen, Hou-Guang
Chen, Guo-Ju
Jang, Jason S. C.
Juang, Jenh-Yih
電子物理學系
Department of Electrophysics
關鍵字: a-Plane ZnO thin film;Nanoindentation;Focused ion beam;Cross-sectional transmission electron microscopy
公開日期: 1-五月-2012
摘要: The effects of O-2 partial pressure during RF magnetron sputtering on the structural and nanomechanical properties of a-plane ZnO thin films were investigated by using X-ray diffraction (XRD) and nanoindentation techniques. The XRD and the transmission electron microscopy (TEM) selected area diffraction results indicate that the epitaxial relationship between ZnO thin films and Al2O3 substrates is ZnO (11 (2) over bar0)//Al2O3 (1 (1) over bar 02). The average values of the hardness and Young's modulus of the a-plane ZnO films were found to decrease with increasing oxygen partial pressure. The cross-sectional TEM revealing the localized plastic deformation of ZnO thin films beneath the Berkovich indenter, indicating the prominent role played by the threading dislocations in the film deformation behavior. At higher indentation loadings, the sapphire substrate exhibits extensive deformation with narrow slip bands appearing on {0001} plane. However, no evidence of pressure-induced phase transformation, as well as cracking and/or delamination phenomena at the film-substrate interface was observed. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.cap.2011.11.018
http://hdl.handle.net/11536/15526
ISSN: 1567-1739
DOI: 10.1016/j.cap.2011.11.018
期刊: CURRENT APPLIED PHYSICS
Volume: 12
Issue: 3
起始頁: 849
結束頁: 853
顯示於類別:期刊論文


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  1. 000300715000044.pdf