|標題:||Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||resistance random access memory (RRAM);reset behavior;thermal conductivity;oxygen ions;switching region|
|摘要:||This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.|
|期刊:||JOURNAL OF PHYSICS D-APPLIED PHYSICS|
|Appears in Collections:||Articles|