標題: Improvement on Electrical Characteristics of HfO2 MIS Capacitor with Dual Plasma Treatment
作者: Chang, Kow-Ming
Chang, Ting-Chia
Chen, Hshu-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: There have been some researches described that nitridation processes could improve thermal stability and dielectric constant of Hf-based dielectrics. The improvement of electrical characteristics of HfO2 thin films with plasma nitridation has been examined. Moreover, CF4 plasma treatment on HfO2 thin films in order to suppress leakage current and passivate defect were also proposed. In this study, we proposed to combine two kinds of plasma treatment, CF4 pre-treatment and nitrogen post-treatment, in order to have further improvement on electrical characteristics. The capacitance-voltage (C-V) characteristics, current-voltage (J-V) characteristics, and hysteresis of the samples were preformed to estimate the improvement effect. According to this study, dual plasma treatment would be an effective technology to improve the electrical characteristic and the hysteresis of pure HfO2 thin films.
URI: http://hdl.handle.net/11536/15432
http://dx.doi.org/10.1149/13568874
ISBN: 978-1-60768-213-4
ISSN: 1938-5862
DOI: 10.1149/13568874
期刊: SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
Volume: 35
Issue: 2
起始頁: 309
結束頁: 316
顯示於類別:會議論文


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