標題: GaN-based microcavity polariton light emitting diodes
作者: Lu, Tien-Chang
Lai, Ying-Yu
Huang, Si-Wei
Chen, Jun-Rong
Wu, Yung-Chi
Lin, Shiang-Chi
Wang, Shing-Chung
Yamamoto, Yoshihisa
光電工程學系
Department of Photonics
關鍵字: GaN;exciton-polariton;light emitting diode (LED);Rabi splitting
公開日期: 2012
摘要: Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.
URI: http://hdl.handle.net/11536/15419
http://dx.doi.org/10.1117/12.908343
ISBN: 978-0-81948-921-0
ISSN: 0277-786X
DOI: 10.1117/12.908343
期刊: LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI
Volume: 8278
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000301055700010.pdf