標題: Low efficiency droop of InGaN/GaN blue LEDs with super-lattice active structure
作者: Chang, Shih-Pang
Sou, Kuok-Pan
Chang, Jet-Rung
Cheng, Yuh-Jen
Li, Yuh-Jing
Chen, Yi-Chen
Kuo, Hao-Chung
Hsu, Ken-Yuh
Chang, Chun-Yen
光電工程學系
Department of Photonics
關鍵字: LEDs;efficiency droop;super-lattice
公開日期: 2012
摘要: We report the efficiency droop behaviors of InGaN/GaN blue LEDs with different thickness of GaN quantum barriers (QBs). The droop percentage from efficiency peak to 70 A/cm(2) is only about 10% as reducing the thickness of GaN QBs from 104 angstrom to 33 angstrom. A less carrier localization has been observed from wavelength dependent time resoled photoluminescence measurement as reducing the thickness of GaN QBs. The alleviation of droop percentage may due to more uniform distribution of electron and hole carrier in the active region, which resulted from super-lattice (SL) like active structure. The crystalline quality does not become worse from the results of v-pits density even thickness of GaN QBs is as low as 33 angstrom. The SL like active structure could be a potential structure to alleviate the efficiency droop for the application of solid state general lighting.
URI: http://hdl.handle.net/11536/15417
http://dx.doi.org/10.1117/12.908121
ISBN: 978-0-81948-921-0
ISSN: 0277-786X
DOI: 10.1117/12.908121
期刊: LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI
Volume: 8278
Appears in Collections:Conferences Paper


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