標題: Mg-induced terahertz transparency of indium nitride films
作者: Ahn, H.
Chia, J. -W.
Lee, H. -M.
Hong, Y. -L.
Gwo, S.
光電工程學系
Department of Photonics
公開日期: 5-十二月-2011
摘要: Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of similar to 0.2, an excellent agreement in mobilities of two methods is obtained. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669538]
URI: http://dx.doi.org/10.1063/1.3669538
http://hdl.handle.net/11536/15362
ISSN: 0003-6951
DOI: 10.1063/1.3669538
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 23
結束頁: 
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