標題: Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
作者: Tseng, Hsueh-Chih
Chang, Ting-Chang
Huang, Jheng-Jie
Chen, Yu-Ting
Yang, Po-Chun
Huang, Hui-Chun
Gan, Der-Shin
Ho, New-Jin
Sze, Simon M.
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nonvolatile resistance switching memory;RRAM;Yb2O3;Forming
公開日期: 30-十二月-2011
摘要: This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb(2)O(3)/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or unipolar. Bipolar behavior exists after the positive forming process, while unipolar behavior exists after the negative forming process. Furthermore, the bipolar switching characteristics of the Pt/Yb(2)O(3)/TiN device can be affected by using a reverse polarity forming treatment, which not only reduces the set and reset voltage, but also improves the on/off ratio. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.07.026
http://hdl.handle.net/11536/15350
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.07.026
期刊: THIN SOLID FILMS
Volume: 520
Issue: 5
起始頁: 1656
結束頁: 1659
顯示於類別:期刊論文


文件中的檔案:

  1. 000299233000054.pdf