標題: Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors
作者: Chang, Geng-Wei
Chang, Ting-Chang
Syu, Yong-En
Tsai, Tsung-Ming
Chang, Kuan-Chang
Tu, Chun-Hao
Jian, Fu-Yen
Hung, Ya-Chi
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Indium Gallium Zinc Oxide (IGZO);Thin film transistors (TFTs);Passivation layer
公開日期: 30-十二月-2011
摘要: In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.08.104
http://hdl.handle.net/11536/15349
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.08.104
期刊: THIN SOLID FILMS
Volume: 520
Issue: 5
起始頁: 1608
結束頁: 1611
顯示於類別:期刊論文


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  1. 000299233000045.pdf