標題: Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
作者: Dai, Chih-Hao
Chang, Ting-Chang
Chu, Ann-Kuo
Kuo, Yuan-Jui
Hung, Ya-Chi
Lo, Wen-Hung
Ho, Szu-Han
Chen, Ching-En
Shih, Jou-Miao
Chung, Wan-Lin
Chen, Hua-Mao
Dai, Bai-Shan
Tsai, Tsung-Ming
Xia, Guangrui
Cheng, Osbert
Huang, Cheng Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-k gate dielectric;TiN metal gate;Electron trapping;Threshold voltage instability
公開日期: 30-十二月-2011
摘要: This letter investigates the reliability issues of HfO(2)/Ti(1-x)N(x) metal-oxide-semiconductor field effect transistor in terms of static and dynamic stress. The results indicate threshold voltage (V(th)) instability under dynamic stress is more serious than that under static stress, owning to transient charge trapping within high-k dielectric. Capacitance-voltage techniques verified that electron trapping under dynamic stress was located in high-k dielectric near the source/drain (S/D) overlap region, rather than the overall dielectric. Furthermore, the V(th) shift clearly increases with an increase in dynamic stress operation frequency. This phenomenon can be attributed to the fact that electrons injecting to the S/D overlap region have insufficient time to de-trap from high-k dielectric. We further investigated the impact of different Ti(1-x)N(x) composition of metal-gate electrode on charge trapping characteristics, and observed that V(th) shift decreases significantly with an increase in the ratio of nitride. This is because the nitride atoms diffusing from the metal gate fill up oxygen vacancies and reduce the concentration of traps in high-k dielectric. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.07.027
http://hdl.handle.net/11536/15348
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.07.027
期刊: THIN SOLID FILMS
Volume: 520
Issue: 5
起始頁: 1511
結束頁: 1515
顯示於類別:期刊論文


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