標題: Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chen, Shih-Cheng
Chung, Wan-Fang
Chen, Yi-Hsien
Tai, Ya-Hsiang
Tseng, Tseung-Yuen
Yeh (Huang), Fon-Shan
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Indium gallium zinc oxide;Thin film transistors;Gate bias stress
公開日期: 30-Dec-2011
摘要: This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In-Ga-Zn-O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a strongly function with the ambient gas, the simultaneous gas ambient and bias stresses are applied on devices annealed in atmosphere ambient to study this issue. The result shows the device which is annealed at temperature up to 330 degrees C has worst reliability. We suppose that the sensitivity of gas ambient depend the defect state, which is associated to the annealing temperature, of surface in a-IGZO. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.09.033
http://hdl.handle.net/11536/15345
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.09.033
期刊: THIN SOLID FILMS
Volume: 520
Issue: 5
起始頁: 1432
結束頁: 1436
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