Title: AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier
Authors: Chen, Y. -F.
Lee, Y. C.
Huang, S. C.
Huang, K. F.
Chen, Y. F.
電子物理學系
Department of Electrophysics
Issue Date: 1-Jan-2012
Abstract: An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 mu m. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.
URI: http://dx.doi.org/10.1007/s00340-011-4669-y
http://hdl.handle.net/11536/15344
ISSN: 0946-2171
DOI: 10.1007/s00340-011-4669-y
Journal: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 106
Issue: 1
Begin Page: 57
End Page: 62
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