|標題:||Copper-to-copper direct bonding using different (111) surface ratios of nanotwinned copper films|
|作者:||Huang, J. W.|
Shie, K. C.
Liu, H. C.
Li, Y. J.
Cheng, H. Y.
Department of Materials Science and Engineering
|關鍵字:||nanotwinned copper;(111)-surface ratio;copper-to-copper direct bonding|
|摘要:||Copper-to-copper direct bonding emerges to be the most important technique for fine pitch packaging in microelectronic devices. Low temperature Cu-to-Cu direct bonding by using highly (111)-oriented nanotwinned Cu (nt-Cu) has been achieved because Cu (111) surface has higher surface diffusiyities. To investigate the bonding effect by using different surface ratio nt-Cu, electroplating under different conditions was performed. The results indicate that bonding with higher (111)-surface ratio copper films would obtain a higher bonding strength of 15% w hen bonding at 300 degrees C.|
|期刊:||2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019)|
|Appears in Collections:||Conferences Paper|