|標題:||Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Resistance;Transistors;Voltage measurement;Electrical resistance measurement;Electric potential;Current measurement;Logic gates;pinchoff;reset process;resistance random access memory (RRAM)|
|摘要:||This article explains the difference in the reset processes between single RRAM and 1T1R RRAM structures. In the single RRAM, as the reset voltage increases, the off-state resistance increases. This is a normal RRAM operation. However, in the 1T1R structure, the reset voltage increases while the OFF-state resistance does not increase. This may be caused by either current or voltage being insufficient to switch the RRAM to its higher resistance state. The measurements of real voltage indicate that the insufficient voltage is in fact the main cause. For the 1T1R RRAM structure, if it is to be reset to a higher resistance state, it is best done by increasing the gate voltage to increase the OFF-state resistance. Therefore, we provide a method to reduce the misjudgment in the array, and it would be beneficial for the development of high-density memory.|
|期刊:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Appears in Collections:||Articles|