標題: Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations
作者: Lee, Yi-Hsien
Liu, Keng-Ku
Lu, Ang-Yu
Wu, Chih-Yu
Lin, Cheng-Te
Zhang, Wenjing
Su, Ching-Yuan
Hsu, Chang-Lung
Lin, Tsung-Wu
Wei, Kung-Hwu
Shi, Yumeng
Li, Lain-Jong
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
公開日期: 2012
摘要: Layered hexagonal-boron nitride (h-BN) films were synthesized by chemical vapor deposition (CVD) on Ni foils using ammonia borane as a precursor. Confocal Raman spectroscopy and electron backscatter diffraction (EBSD) were used to probe the effect of underlying Ni crystals with various orientations on growth behaviors of h-BN layers. The growth of the h-BN layers strongly depends on the Ni crystal orientations, where the growth rate of h-BN is larger on Ni(100)-like crystal surfaces but the growth on Ni(111)-like surfaces is not detectable, suggesting that Ni (100)-like facets are likely to promote the growth of h-BN compared with Ni (111)-like surfaces. The observation is in clear contrast to the reported growth of h-BN on Ni(111) in an ultrahigh vacuum environment. The as-grown CVD h-BN films on Ni exhibit a layered structure as revealed by atomic force microscopy (AFM). Thin h-BN layers are found on the Ni domain with a low growth rate. The observation of h-BN growth on various Ni grains may provide insights for the control of thickness, size and morphology of CVD h-BN films.
URI: http://hdl.handle.net/11536/15320
http://dx.doi.org/10.1039/c1ra00703c
ISSN: 2046-2069
DOI: 10.1039/c1ra00703c
期刊: RSC ADVANCES
Volume: 2
Issue: 1
起始頁: 111
結束頁: 115
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