Title: The Effect of Silicon Oxide Based RRAM with Tin Doping
Authors: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Syu, Yong-En
Chuang, Siang-Lan
Li, Cheng-Hua
Gan, Der-Shin
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2012
Abstract: Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. But silicon oxide cannot be used as resistance random access memory (RRAM) due to its native electrical properties. In this work, based on the concept of inducing defect by metal doping into insulator, silicon oxide with a few tin dopants at room temperature can successfully be used as switching layer in RRAM. According to electrical analyses, the current transport mechanism in Sn-doped silicon oxide is governed by Pool-Frenkel emission, which demonstrates the conduction path in the RRAM guided by Sn doping induced defect. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013203esl] All rights reserved.
URI: http://hdl.handle.net/11536/15300
ISSN: 1099-0062
DOI: 10.1149/2.013203esl
Volume: 15
Issue: 3
Begin Page: H65
End Page: H68
Appears in Collections:Articles