標題: Growth and Characteristics of a-Plane GaN on ZnO Heterostructure
作者: Huang, Huei-Min
Kuo, Chin-Chia
Chang, Chiao-Yun
Lin, Yuan-Ting
Lu, Tien-Chang
Tu, Li-Wei
Hsieh, Wen-Feng
光電工程學系
Department of Photonics
公開日期: 2012
摘要: We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.080203jes] All rights reserved.
URI: http://hdl.handle.net/11536/15299
http://dx.doi.org/10.1149/2.080203jes
ISSN: 0013-4651
DOI: 10.1149/2.080203jes
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 159
Issue: 3
起始頁: H290
結束頁: H292
顯示於類別:期刊論文


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  1. 000299292100075.pdf