標題: Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications
作者: Peng, Kang-Ping
Huang, Tsung Lin
George, Tom
Lin, Horng-Chih
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Si3N4 densification;Si3N4 crystallization;germanium quantum dot
公開日期: 4-Oct-2019
摘要: A new phenomenon of highly localized, nanoscale densification and crystallization of silicon-nitride (Si3N4) layers has been observed. A drastic reduction in the thermal budget (temperature and processing time) for local densification and even nanocrystallization of low-pressure chemical vapor deposited amorphous Si3N4 layers is mediated by the presence of Ge, Si, and O interstitials in close proximity to the Si3N4. The enhancement of localized densification and nanocrystallization observed in Si3N4 layers appears to be catalyzed by proximal Ge quantum dots (QDs) 'migrating' through the Si3N4/Si layers and are influenced by the oxidation time and Ge QD size. Implications of the highly localized, nanoscale densification and crystallization of silicon-nitride (Si3N4) layers for photonic and electronic device applications are discussed.
URI: http://dx.doi.org/10.1088/1361-6528/ab2d4a
http://hdl.handle.net/11536/152724
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ab2d4a
期刊: NANOTECHNOLOGY
Volume: 30
Issue: 40
起始頁: 0
結束頁: 0
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