|標題:||Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access Memory|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||complementary resistive switching;conductive bridge random access memory;indium;resistive random access memory|
|摘要:||This study proposes the design of conductive bridge random access memory (CBRAM) using an indium electrode, which diffuses into hafnium oxide. The device is found to exhibit good operating characteristics, maintaining a large operation window, low set and reset voltages, and advantageous operation speed, thereby reducing operating power consumption. Electrical experiments, transmission electron microscopy, and energy-dispersive spectroscopy confirm that the device exhibits the characteristics of a CBRAM device. In addition, due to the large operation window of this In electrode device, a combination of two of these CBRAM can act as a complementary resistive switching (CRS) device with a large memory window.|
|期刊:||PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS|
|Appears in Collections:||Articles|